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2020 IEEE International Solid-State Circuits Conference (ISSCC)
[1] Tzu-Hsiang Hsu, Yen-Kai Chen, Jun-Shen Wu, Wen-Chien Ting, Cheng-Te Wang, Chen-Fu Yeh, Syuan-Hao Sie, Yi-Ren Chen, Ren-Shuo Liu, Chung-Chuan Lo, Kea-Tiong Tang, Meng-Fan Chang, Chih-Cheng Hsieh, “A 0.8V Multimode Vision Sensor for Motion and Saliency Detection with Ping-Pong PWM Pixel,” 2020 IEEE International Solid-State Circuits Conference (ISSCC), Feb. 2020.
[2] J-W. Su, X. Si, Y-C. Chou, T-W. Chang, W-H. Huang, Y-N. Tu, R. Liu, P-J. Lu, T-W. Liu, J-H. Wang, Z. Zhang, H. Jiang, S. Huang, C-C. Lo, R-S. Liu, Chih-Cheng Hsieh, K-T. Tang, S-S. Sheu, S-H. Li, H-Y. Lee, S-C. Chang, S. Yu, M-F. Chang, “A 28nm 64Kb Inference-Training Two-Way Transpose Multibit 6T SRAM Compute-in-Memory Macro for AI Edge Chips,” 2020 IEEE International Solid-State Circuits Conference (ISSCC), Feb. 2020.
[3] C-X. Xue, T-Y. Huang, J-S. Liu, T-W. Chang, H-Y. Kao, J-H. Wang, T-W. Liu, S-Y. Wei, S-P. Huang, W-C. Wei, Y-R. Chen, T-H. Hsu, Y-K. Chen, Y-C. Lo, T-H. Wen, C-C. Lo, R-S. Liu, Chih-Cheng Hsieh, K-T. Tang, M-F. Chang, “A 22nm 2Mb ReRAM Compute-in-Memory Macro with 121-28TOPS/W for Multibit MAC Computing for Tiny AI Edge Devices,” 2020 IEEE International Solid-State Circuits Conference (ISSCC), Feb. 2020.
[4] X. Si1, Y-N. Tu, W-H. Huang, J-W. Su, P-J. Lu, J-H. Wang, T-W. Liu, S-Y. Wu, R. Liu, Y-C. Chou, Z. Zhang, S-H. Sie, W-C. Wei, Y-C. Lo, T-H. Wen, T-H. Hsu, Y-K. Chen, W. Shih, C-C. Lo, R-S. Liu, Chih-Cheng Hsieh, K-T. Tang, N-C. Lien, W-C. Shih, Y. He, Q. Li, M-F. Chang, “A 22nm 2Mb ReRAM Compute-in-Memory Macro with 121-28TOPS/W for Multibit MAC Computing for Tiny AI Edge Devices,” 2020 IEEE International Solid-State Circuits Conference (ISSCC), Feb. 2020.
2019 IEEE International Electron Devices Meeting (IEDM)
[1] [Invited] Tzu-Hsiang Hsu, Yen-Cheng Chiu, Wei-Chen Wei, Yun-Chen Lo, Chung-Chuan Lo, Ren-Shuo Liu, Kea-Tiong Tang, Meng-Fan Chang, and Chih-Cheng Hsieh, “AI Edge Devices Using Computing-In-Memory and Processing-In-Sensor: From System to Device,” 2019 IEEE International Electron Devices Meeting (IEDM), Dec. 2019.
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